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| BSM 200 GT 120 DN2 IGBT Power Module Preliminary data * Solderable Power module * 3-phase full-bridge * Including fast free-wheel diodes * Package with insulated metal base plate Type BSM 200 GT 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V VCE IC Package TRIPACK Ordering Code C67070-A2519-A67 1200V 300A VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 300 200 TC = 25 C TC = 125 C Pulsed collector current, tp = 1 ms ICpuls 600 400 TC = 25 C TC = 125 C Power dissipation per IGBT Ptot 1400 W + 150 -55 ... + 150 0.09 0.18 2500 20 11 F 55 / 150 / 56 Vac mm K/W C TC = 25 C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis - Semiconductor Group 1 Aug-23-1996 BSM 200 GT 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 3 12 6.5 3 3.7 V VGE = VCE, IC = 8 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 200 A, Tj = 25 C VGE = 15 V, IC = 200 A, Tj = 125 C Zero gate voltage collector current ICES 4 - mA VCE = 1200 V, VGE = 0 V, Tj = 25 C VCE = 1200 V, VGE = 0 V, Tj = 125 C Gate-emitter leakage current IGES 200 nA VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 108 18 2.5 1 - S nF - VCE = 20 V, IC = 200 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Aug-23-1996 BSM 200 GT 120 DN2 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time Values typ. max. Unit td(on) 180 350 ns VCC = 600 V, VGE = 15 V, IC = 200 A RGon = 4.7 Rise time tr 80 160 VCC = 600 V, VGE = 15 V, IC = 200 A RGon = 4.7 Turn-off delay time td(off) 750 950 VCC = 600 V, VGE = -15 V, IC = 200 A RGoff = 4.7 Fall time tf 70 100 VCC = 600 V, VGE = -15 V, IC = 200 A RGoff = 4.7 Free-Wheel Diode Diode forward voltage VF 2.3 1.8 2.8 - V IF = 200 A, VGE = 0 V, Tj = 25 C IF = 200 A, VGE = 0 V, Tj = 125 C Reverse recovery time trr 400 - ns IF = 200 A, VR = -600 V, VGE = 0 V diF/dt = -2000 A/s, Tj = 125 C Reverse recovery charge Qrr C IF = 200 A, VR = -600 V, VGE = 0 V diF/dt = -2000 A/s Tj = 25 C Tj = 125 C 12 36 - Semiconductor Group 3 Aug-23-1996 BSM 200 GT 120 DN2 Power dissipation Ptot = (TC) parameter: Tj 150 C 1500 W 1300 Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 3 tp = 48.0s A 100 s Ptot 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 0 IC 10 2 1 ms 10 1 10 ms 20 40 60 80 100 120 C 160 10 0 0 10 10 1 10 2 DC 3 10 V TC VCE Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 300 A 260 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 K/W 10 -1 IGBT IC 240 220 200 180 160 140 120 100 80 60 40 20 0 0 ZthJC 10 -2 D = 0.50 10 -3 0.20 0.10 0.05 10 -4 0.02 single pulse 0.01 20 40 60 80 100 120 C 160 10 -5 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 TC tp Semiconductor Group 4 Aug-23-1996 BSM 200 GT 120 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) parameter: tp = 80 s, Tj = 25 C 400 IC = f (VCE) parameter: tp = 80 s, Tj = 125 C 400 A IC 300 17V 15V 13V 11V 9V 7V A IC 300 17V 15V 13V 11V 9V 7V 250 250 200 200 150 150 100 100 50 0 0 50 0 0 1 2 3 V 5 1 2 3 V 5 VCE VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 400 A IC 300 250 200 150 100 50 0 0 2 4 6 8 10 V 14 VGE Semiconductor Group 5 Aug-23-1996 BSM 200 GT 120 DN2 Typ. gate charge VGE = (QGate) parameter: IC puls = 200 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 2 nF VGE 16 14 12 10 8 C 600 V 800 V 10 1 Ciss Coss 10 0 Crss 6 4 2 0 0 10 -1 0 200 400 600 800 1000 nC 1400 5 10 15 20 25 30 QGate V 40 VCE Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V 2.5 ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 50 nH 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 200 400 600 800 1000 1200 V 1600 VCE 0 0 200 400 600 800 1000 1200 V 1600 VCE Semiconductor Group 6 Aug-23-1996 BSM 200 GT 120 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 4.7 10 4 t = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, IC = 200 A 10 4 ns t 10 3 tdoff t ns tdoff 10 3 tdon tr 10 2 tdon tr tf 10 2 tf 10 1 0 100 200 300 A 500 10 1 0 10 20 30 40 IC 60 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 4.7 100 mWs E 80 70 60 50 40 30 20 10 0 0 Eoff Eon E = f (RG) , inductive load , Tj = 125C par.: VCE = 600V, VGE = 15 V, IC = 200 A 100 Eon mWs E 80 70 60 50 Eoff 40 30 20 10 0 0 100 200 300 A 500 10 20 30 40 IC 60 RG Semiconductor Group 7 Aug-23-1996 BSM 200 GT 120 DN2 Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj 400 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 Diode A K/W IF 300 ZthJC 10 -1 250 Tj=125C 200 Tj=25C 10 -2 D = 0.50 0.20 150 10 -3 single pulse 50 0 0.0 10 -4 -5 10 0.10 0.05 0.02 0.01 100 0.5 1.0 1.5 2.0 V 3.0 10 -4 10 -3 10 -2 10 -1 s 10 0 VF tp Semiconductor Group 8 Aug-23-1996 BSM 200 GT 120 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 300 g Semiconductor Group 9 Aug-23-1996 |
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